发明名称 |
Merged platinum silicide fuse and Schottky diode and method of manufacture thereof |
摘要 |
A merged platinum silicide fuse and Schottky diode structure and method of manufacturing the merged structure is presented. The merged structure is formed by an insulating layer having an aperture over a silicon substrate. A shaped layer of polysilicon lies on the insulating layer and contacts the substrate through the aperture; a layer of platinum silicide in the same shape as the polysilicon layer covers the polysilicon layer. The region of polysilicon - PtSi layers over the substrate contact forms a Schottky diode and the region on the insulating layer forms the fuse. This merged structure has superior Schottky diode electrical characteristics and is more compact compared to prior art structures.
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申请公布号 |
US4518981(A) |
申请公布日期 |
1985.05.21 |
申请号 |
US19810320368 |
申请日期 |
1981.11.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SCHLUPP, RONALD L. |
分类号 |
H01L23/525;H01L29/872;(IPC1-7):H01L29/48;H01L23/48;H01L27/02;H01L29/40 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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