| 发明名称 |
Method for tapered dry etching |
| 摘要 |
Holes in substrates are produced by a photolithography-plasma dry etching method employing a positive photoresist mask such as poly(methyl methacrylate) which is capable of being isotropically eroded by plasma action. The result is simultaneous anisotropic etching of the substrate and isotropic erosion of the mask, producing tapered holes.
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| 申请公布号 |
US4522681(A) |
申请公布日期 |
1985.06.11 |
| 申请号 |
US19840602873 |
申请日期 |
1984.04.23 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GOROWITZ, BERNARD;SAIA, RICHARD J. |
| 分类号 |
H01L21/302;G03F7/09;H01L21/3065;H01L21/311;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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