| 摘要 |
PURPOSE:To miniaturize the device and the reduce electric power consumption for aging by obtaining necessary temperature condition for aging utilizing the self heat generation of a semiconductor device during aging. CONSTITUTION:An LSI1 is supported by inserting a lead pin to a socket 2 on a socket holding plate 3 supported by a socket support 4 and contained in an aging space 6 in a heat insulating material 5. Electric power for aging is supplied from a power source 9 for aging to the LSI1 through a controller 8, a feeder 7 and a socket 2, and the LSI1 causes the self heat generation to raise temperature. The controller 8 controls magnitude of electric power supplied from the aging power source 9 to the LSI1 basing on the temperature of the LSI1 detected by a temperature sensor 10, and maintains necessary aging temperature in the aging space 6.
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