| 摘要 |
PURPOSE:To set the conditions of implantation rapidly and suitably by a method wherein the conditions of ion implantation are determined by corresponding to a transistor to be manufactured not by experience or intuition, and are checked with process simulation data, resulting in the determination of the amount of ion implantation, the data of ion implantation energy, and the beam current value. CONSTITUTION:An input controller 15 with the input of target values such as the orientation of semiconductor substrate planes, the kind and the concentration of the initial impurity, the oxidation temperature, atmosphere, the thickness of an oxide film, annealing temperature after ion implantation, annealing time, and threshold voltage is connected to an ion implantation device via the first microprocessor 11 and the second microprocessor 12. In this construction, a display device 16, a beam current memory 14, and a process condition memory 13 are kept connected to the processor 11; then, these input conditions are simulated by corresponding to the characteristic of the transistor to be manufactured, and ions are implanted to the semiconductor substrate according to this result. |
