| 摘要 |
PURPOSE:To prevent an influence of an external high frequency electric field by connectig a capacitor between at least one electrode among a drain electrode and a source electrode of an electric field effect type transistor and an earth potential. CONSTITUTION:In an infrared ray sensor, if a pyroelectric element 1 receives light, a gate potential is varies with a variation of the infrared ray, a drain current of an FET2 is varied and the current flows through a source resistance RS, thereby generating a detecting voltage VO between terminals 4, 5. The capacitor C2 is connected between the source electrode S and an earth while the capacitor C1 is connected between the drain electrode D and the earth.
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