| 摘要 |
PURPOSE:To set the threshold value of each FET to a low value by giving a delay to one of a gate input of a CMOS inverter to reduce an ineffective current at transition. CONSTITUTION:When an input Vin rises, an input is applied to a gate Q1 of a P-MOSFET via a diode D1 without any delay to turn off rapidly the FETQ1, while a delayed waveform obtained by charging a gate capacitor from the input Vin via a resistor R2 is applied to a gate of an N-MOSFETQ2, then the turning- on is delayed and the FETs Q1, Q2 are not turned on at the same time. When the input Vin is descended, the N-MOSFETQ2 is turned off without any delay and the P-MOSFET is turned on with a delay, then they are not turned on at the same time and the ineffective current is decreased. Since the threshold value of each FET is decreased, the output impedance is decreased in comparison with that of a conventional circuit when the circuit is driven by the same input voltage. |
