| 摘要 |
PURPOSE:To enable the formation of three-dimensional LSI's of simple structure and high reliability by a method wherein the gate electrode of each MOS type transistor is connected to a p or n type region constituting a photo diode and to a source or drain region via resistance element. CONSTITUTION:An image input device consists of an MOS transistor 20 as an inverter transistor formed on a p type Si substrate 10 and of a photo receiving diode 40 formed on this transistor 20 via insulation film 30. This transistor 20 is composed of the source (region) 21 and the drain (region) 22 n<+> Si regions formed in the p type Si substrate 10, the gate electrode 24 made of poly Si formed on the surface of the p type Si (substrate) region positioned between the source 21 and the drain 22 via thermal oxide film 23, and the first metallic electrode 25. Further, a high-resistant poly Si layer 26 is formed from over this gate electrode 24 to over the source region 21. |
