| 摘要 |
PURPOSE:To prevent characteristics of a semiconductor IC substrate from deteriorating even under irradiation with radiation by providing a heat generation resistor to heat said substrate. CONSTITUTION:A container 1 is provided inside its main body 2 with the heat generation resistor 10 to heat the semiconductor IC substrate 5 to dissipate holes, trapped at the interface between the semiconductor substrate body 6 of the substrate 5 and oxide layers or films 8 and 9 (in case a semiconductor element 7 is an MOS type transistor, containing its gate insulation film) or in its neighborhood, out of the oxide layers or films 8 and 9, e.g. in a plurality or in a buried state. Thereby, when the resistors 10 provided in the container 1 are heated, the heat is conducted to the substrate 5 via container 1, resulting in heating the substrate 5. |
