| 摘要 |
PURPOSE:To avoid the lowering of yield on a change into a single crystal by each scanning nonsingular crystal Si islands by energy beams at a time when the Si islands coated with isolation cap layers, thermal conductivity thereof is lower than Si, and cap layers for absorbing energy beams are formed on an insulating layer and energy beams are projected to change the Si islands into single crystals. CONSTITUTION:Laser lights are projected in the direction of the arrows III, IV, V, and amorphous single crystal islands 14 coated with isolation cap layers, thermal conductivity thereof is lower than Si, are melted again in succession and changed into single crystals. Laser lights having spot diameters S, which are wider than the width (d) of the islands 14 but do not superpose on the end sections of adjacent islands 14, are used at that time, and a thermal effect on adjacent islands 14 is eliminated. Accordingly, adjacent islands 14 can be melted and cooled without effects from others, and a phenomenon in which the Si islands are not recrystallized can be avoided. |
