| 摘要 |
PURPOSE:To obtain a laminated solid-state image pickup device capable of having a sufficient resolution degree by a photoelectric transfer film of a low resistance by constituting a photoelectric transfer film in such a way that each picture element is electrically separated. CONSTITUTION:A charge accumulating part capacity 4 is formed on a p type silicon substrate 1. Moreover a signal line 2 and a reading gate 3 are formed, on which an a-Si photoelectric transfer film 6 is formed, and each picture element is electrically separated. With this constitution, even when the a-Si photoelectric transfer film 6 is of low resistance, a leak current will not occur between adjacent picture elements, and an original resolution degree can be obtained.
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