LIGHT-EMITTING DEVICE

摘要

An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.

主权项

1. A light-emitting device, comprising:
a first light-emitting semiconductor stack having a first transverse width and comprising a first active layer, wherein the first active layer emits a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer on the first light-emitting semiconductor stack, wherein the second active layer emits a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure comprises multiple layers having refractive indices different from one another, and the refractive indices of the multiple layers of the first conductive connecting structure are decreased as the distance between the layer of the first conductive connecting structure and the first light-emitting semiconductor stack increases, wherein one of the multiple layers having a refractive index between 1.35 and 1.48.