Electrode pattern of semiconductor device and method of forming thereof.

摘要

A method of forming an electrode pattern on a surface of a semiconductor substrate which comprises the steps of forming a metal film (WN) which is vulnerable to reactive ion etching on a surface of the semiconductor substrate (1), forming on the metal film another metal film (Au) which is vulnerable to ion milling but is resistant to the reactive ion etching, forming a resist pattern (4) on the other metal film (Au) and selectively etching it by ion milling using the resist pattern (4) as a mask, and selectively etching the first metal film (WN) by reactive ion etching using the other metal film (Au) as a mask. A semiconductor device having an electrode pattern as formed by the above method is also disclosed.