| 摘要 |
PURPOSE:To measure and control ion concentration implanted accurately by stopping beam projection to a semiconductor substrate by a slit for beam blanking and mounting an ion current instrument to the upper surface of the slit. CONSTITUTION:The direction of projection of ion beams 11 is changed over at high speed by transmitting ON-OFF signals over a blanking electrode 5. Ion beams 11 progress along an optical axis on ''ON'', and pass through a slit 7 for preventing beams for blanking. When ion implantation to one region on a designated semiconductor substrate 10 is completed, ''OFF'' signals are transmitted over the blanking electrode 5, ion beams 11 are swung so as to be separated from the optical axis, projected onto the upper surface of the slit 7 for preventing beams, and measured by an ion current instrument 6 such as a Faraday cup mounted at the position of projection, an ion current value is fed back, and driving voltage for an ion implantation device is controlled while the quantity of ions implanted can be obtained accurately. |
