LTPS TFT PIXEL UNIT AND MANUFACTURE METHOD THEREOF

摘要

The present invention discloses a LTPS TFT pixel unit and a manufacture method thereof. The method comprises steps of: providing a substrate and forming a buffer layer on the substrate; forming a semiconductor pattern layer and a first insulative layer on the buffer layer, and the semiconductor pattern layer and the first insulative layer are located in the same layer and heights of the semiconductor pattern layer and the first insulative layer are the same. With the aforesaid arrangement, the present invention can reduce the side effect of the LTPS TFT pixel unit and promote the electrical property thereof.

主权项

1. A manufacture method of a LTPS TFT pixel unit, wherein the method comprises steps of:
providing a substrate and forming a buffer layer on the substrate; forming a semiconductor pattern layer and a first insulative layer, and the semiconductor pattern layer and the first insulative layer are located in the same layer and heights of the semiconductor pattern layer and the first insulative layer are the same; wherein the step of forming a buffer layer on the substrate comprises: sequentially forming a silicon nitride layer and a silicon oxide layer on the substrate; the step of forming a semiconductor pattern layer and a first insulative layer on the buffer layer, and the semiconductor pattern layer and the first insulative layer are located in the same layer and heights of the semiconductor pattern layer and the first insulative layer are the same comprises: forming an amorphous silicon layer on the buffer layer, and implementing crystallization operation to the amorphous silicon layer to form a polysilicon layer; patterning the amorphous silicon layer with a first photolithography process to form the semiconductor pattern layer; forming a silicon nitride layer, of which a height is the same as the height of the semiconductor pattern layer on the semiconductor pattern layer and the buffer layer where the semiconductor pattern layer is not formed; coating negative photoresist on the silicon nitride layer at a location not corresponding to the semiconductor pattern layer; patterning the silicon nitride layer with a second photolithography process; further etching the silicon nitride layer on the semiconductor pattern layer to etching remove the silicon nitride layer on the semiconductor pattern layer for forming the first insulative layer, of which a height is the same as the height of the semiconductor pattern layer at two ends of the semiconductor pattern layer.