发明名称 GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To minimize defect density in the surface largely while reducing the dispersion of defect density by forming the longitudinal direction of a channel in parallel with or in approximately parallel with the <2nn> direction. CONSTITUTION:The longitudinal directions of all channels CHs are shaped in parallel with or in approximately parallel with the <211> direction in one direction. In experiments regarding the element characteristics of a GTO, in which all channels CHs are shaped in parallel in one direction of <211> in this manner, and a GTO in which the longitudinal directions of channels are directed in one direction of <110>, the dispersion of ON voltage among elements is reduced to approximately one fifth. Accordingly, the channels are formed so that the longitudinal directions of the channels run parallel with or approximately parallel with the <2nn> direction on n=0, 1, 2, 3....
申请公布号 JPS60253269(A) 申请公布日期 1985.12.13
申请号 JP19840109164 申请日期 1984.05.29
申请人 MEIDENSHA KK 发明人 HAYASHI YASUHIDE;KAWAMURA TAKAYASU
分类号 H01L29/74;H01L29/04;H01L29/10;H01L29/744;H01L29/78 主分类号 H01L29/74
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