| 摘要 |
Disclosed is a method of forming a precision integrated resistor element on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body in combination with a test resistor structure by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring the resistance(s) and width(s) of the test structure the variation DELTA rho s in sheet resistance and variation DELTA W in width due to process and image tolerances, respectively, are determined. Next, using DELTA rho s and DELTA W the adjustment in length DELTA L necessary to match the resistance of the resistance element with the nominal design value is calculated. Finally, this information ( DELTA L) is supplied to an E-beam generating system to expose an E-beam sensitive contact level layer formed on the resistor body to form metal contact openings for the resistor body at a separation which provides a resistor having a resistance value corresponding to the design value.
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