| 摘要 |
PURPOSE:To improve the asymmetry of read waveform by providing an M film at both sides of an MR film, arranging the MR film at the center of a couple of the MS films and forming three-layer structure of PM film/MR film/PM film altogether so as to utilize the advantage of the magneto-resistance effect of the magnetic bias system without remarkable manufacture process change. CONSTITUTION:Magnetic bias thin films (PM films) 31, 31' are provided at both sides of the magneto-resistance effect thin film (MR film) 2, and they are arranged at the inside of a couple of the magnetic shield thin films 1, 1'. The PM films 31, 31' have self-magnetization 41, 41', a bias magnetization 5 is caused in the MR film 2 by an anti-magnetic field and bias magnetization 61, 61' is caused by the anti-magnetic field also in the MS films 1, 1'. The MR film 2 is arranged in the center of the MS films 1, 1', the PM films 31, 31' are arranged symmetrically at both sides of the MR film 2 and the PM films 31, 31' and the PR film 2 are formed in the same chamber so as to make the magnetic characteristic of the PM films 31, 31', that is, the self- magnetization 41, 41' the same, resulting that the bias magnetization 61, 61' in the MS films 1, 1' are made equal. Thus, the front and rear part of the read waveform are made nearly equal and the waveform asymmetricity is improved. |
