| 摘要 |
PURPOSE:To allow a wiring layer having good ohmic contact to be obtained without deterioration in junction characteristics by forming a thin metal film on the bottom of a contact window and an insulating film and cleaning the layer by sputtering it in an active gas from the upper side of the metal film. CONSTITUTION:After an N<+> type silicon diffusion layer 2 is formed in a P type silicon substrate 1, a silicon oxide film 3 is built up and a contact window 4 is bored. Next, when a titan film 6 is formed by an evaporation method and the surface of the substrate 1 is etched by sputtering argon gas, a natural oxide film 5 on the diffusion layer 2 at the bottom of the contact window is substantially removed, and at the same time, one part of titan discharged in the vapor phase is again deposited on the diffusion layer 2 at the bottom of the contact hole to form a titan film 7 by its implantation onto the surface of the diffusion layer. After this, an aluminum film 8 as a wiring metal film is formed by a vacuum evaporation method. This causes etching of the silicon oxide film 3 around the contact hole to be suppressed by the presence of the titan film 7 and at the same time, damages due to sputtering on the surface of the diffusion layer 2 to be largely reduced. |
