| 摘要 |
PURPOSE:To obtain a field-effect type transistor having excellent reproducibility and high performance by forming a buffer layer and an active layer through an epitaxial growth method and separately shaping a contact layer through an ion implantation method. CONSTITUTION:A buffer layer 21 and an active layer 22 are formed continuously onto a semi-insulating substrate 20 through a vapor-phase epitaxial growth method. A metal such as Si is implanted to the whole surface of the active layer through an ion implantation method, an insulating film as a protective film is shaped onto the whole surface of a wafer, and the wafer is thermally treated in a short time through a method such as a flash annealing method to form a contact layer 24. An oxide film 23 is removed, and a mesa 25 is shaped. One parts of the contact layer 24 and the active layer 22 are dug in, and a gate electrode 26 is formed. A source electrode 27 and a drain electrode 28 are shaped onto the contact layer. According to the method, source resistance is reduced, and the concentration of the buffer layer is stabilized, thus manufacturing a field-effect type transistor having excellent reproducibility and low noises. |
