| 摘要 |
PURPOSE:To effect high-efficiency, small-current, single transverse mode oscillation by a method wherein a structure is so designed that a current-constricting stripe is built therein and the laser beam and carriers are effectively confined in the directions vertical to and parallel with an activation layer. CONSTITUTION:On a P type GaAs substrate 1, an N type GaAs layer 2 is grown until it is 0.8mum thick and then a stripe-geometry groove is formed wherein the depth h=1.2mum. Next, on the substrate 1, by applying the organic metal vapor phase epitaxial growth method, a P type Ga1-XAlXAs clad layer 6 which is 1.5mum thick throughout its flat stretch, a 0.05mum-thick P type Ga1-YAlYAs activation layer 7 (0<=y<x; y<z), a 1.5mum-thick N type Ga1-ZAlZAs clad layer 8, a 0.5mum-thick N type GaAs contact layer 9 are formed, all epitaxially. Finally, ohmic electrodes 12, 13 are built.
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