| 摘要 |
PURPOSE:To reduce noise, and to increase gm by providing a junction on the surface of the semiconductive layer between a source electrode and a schottky gate electrode, thereby increasing the surface potential of the semiconductive layer adjacent to the junction. CONSTITUTION:A GaAs layer 2 is epitaxially grown on a GaAs base board 1, and a Si dope, N type AlXGa1-XAs (x=0.3) layer 3 is epitaxially grown on the layer 2 to form a hetero junction 4. A schottky gate electrode 5, a source electrode 5, and a drain electrode 7 are formed on the layer 4, and further a P type AlXGa1-XAs is formed on the layer 3 between the source electrode 6 and schottky gate electrode 5. In this case, a source region 8 is formed through the layer 13, layer 3, and layer 2, and the source electrode 6 is formed on the layer 13. With the layer 13, a p-n junction 14 is formed between the layer 13 and layer 2, and the built-in potential of the junction 14 increases the surface potential of the layer 3, thereby decreasing the noise and increasing the gm. |
