| 摘要 |
PURPOSE:To enable reaction to be caused at <=500 deg.C by introducing an inorg. silane and >= one kind of specified reaction gas into a reaction vessel and irradiating the surface of a material to be treated in the reaction vessel with ultraviolet rays while maintaining the reaction temp. at <=500 deg.C. CONSTITUTION:An inorg. silane and at least one kind of reaction gas among NO2, N2O, NO, CO2, CO, and NH3 are introduced into a reaction vessel. The reaction temp. is held at <=500 deg.C and the reaction gas is photo-excited to cause reaction by irradiating the surface of a material placed in the reaction vessel with ultraviolet rays forming an SiO2 film, Si3N4 film, or SixOyNz film on the surface of the material to be treated. Further, a water 14 is placed on a susceptor 12 in the reaction vessel 10, and the susceptor 12 is heated by a heater 16 so that the temp. at the surface of the susceptor 12 reaches the reaction temp. of the reaction gas. An Hg lamp 18 for generating the ultraviolet rays is provided to the surface of the water 14. |
