| 摘要 |
PURPOSE:To obtain the semiconductor device without the possibility of disconnection of the upper wiring by virtue of evenness if the thin material for electrodes is buried by forming a groove whose width is narrower than the minimum size in a photolithography method. CONSTITUTION:A photoresist pattern 23 is formed on a substrate 21 and an N<-> type diffusion layer 24 is formed. After the photoresist pattern 23 is removed, the first masking material 25 is deposited and then the part of it of about 1.2mum width corresponding to the N<-> type diffusion layer 24 is etched to form an opening part 26. The second masking material 27 whose selective ratio of etching of the substrate 21 at reactive ion etching is 1-5 is deposited over the whole surface in a manner it extends along the side walls of the first masking material 25 in the opening part 26. By the reactive ion etching, the second masking material 27 and the substrate 21 are etched. At this time, the second masking material 27 and the substrate 21 are etched according to the selective ratio and the groove 28 the lower part of which is narrower than the opening part 26 of the first masking material 25 and the top part of which becomes wide is formed. |
