| 摘要 |
PURPOSE:To reduce the amt. of impurities such as heavy metals in a single crystal and to improve the characteristic of a semiconductor element by using a gaseous atmosphere contg. an halogen element when the titled silicon single crystal is produced by a CZ or an FZ method. CONSTITUTION:Gaseous argon mixed with >=0.1% halogen-contg. gas is introduced under ordinary pressure from the lower part of the silicon single crystal pulling device of a CZ method, for example. As the halogen compd., HCl, SiCl4, SiHCl3, Cl2, etc., can be used. In the CZ method, for example, when gaseous argon mixed with 0-0.6% HCl is used, the life time of the minority carrier of a silicon wafer is as shown in the figure, and the life time is prolonged by use of HCl. |
