| 摘要 |
PURPOSE:To prevent breakdown of a P-N junction, which is formed in a shallow depth, by making an electrode wiring layer of a metal silicide at a part of an electrode taking out part thinner than the other part. CONSTITUTION:Holes 13 are provided in an SiO2 film 12 as specified, and electrodes and wirings are formed by poly Si. Then, a part of the electrode is coated by SiO2. Pt is deposited on the entire surface, and heat treatment is performed. Pt silicide having a specified thickness is formed on the surface of the poly Si. The non-reacted Pt and the SiO2 mask are removed. The Pt is deposited again on the entire surface so that it is thinner than the first time. Heat treatment is performed. The Pt silicide is formed at the electrode part, which is masked at first. In the metal silicide layer, the resistance of the layer is decreased in inversely proportional to the thickness. The P-N junction of a semiconductor is broken at a certain thickness or more. In this constitution, however, since the metal silicide can be formed in a desired thickness, the breakdown of the P-N junction is prevented, and the device having low layer resistance is obtained at a high yield rate. |
