| 摘要 |
PURPOSE:To enable to control the quantity of etching by chlorine radicals or chlorine molecules and to enable to improve the uniformity of etching in a material to be etched by a method wherein the exhaust velocity to exhaust gas for etching in the etching chamber is quickened. CONSTITUTION:Chlorine gas or gas containing at least chlorine is introduced in an etching chamber 11, and at the same time, discharge is made to generate between a pair of electrodes disposed in opposition to each other in the etching chamber 11 and an etching is performed on an aluminum material or a material containing at least aluminum. The exhaust velocity to exhaust gas in the etching chamber 11 is set at a velocity, at which gas equivalent to 1/2 or more of the capacity of the etching chamber 11 in the duration of one second can be exhausted. For performing actually an exhaust of gas in the etching chamber 11, firstly valves 21b and 21d are opened and valves 21c and 21e are shut and gas in the vacuum chamber 11 is exhausted by a DP24 and an RP26. After gas in the container 11 is once exhausted to the prescribed pressure (the pressure at the time of etching to perform on the foregoing aluminum material), the valves 21b and 21d are shut and the valves 21c and 21e are opened, and gas in the container 11 is exhausted by an MBP25 and the RP26. |
