| 摘要 |
PURPOSE:To reduce the capacity of a bonding pad, by forming at least a part of an insulating layer with at least heat-resistant resin material. CONSTITUTION:An N-type InP substrate 41 is laminated with an N-type InP layer 50, an N-type InGaAsP layer 42, N-type InP layer 43, an N-type InGaAsP layer 51, all undoped and sequentially grown. After a circular P-type transformation region is then formed by Zn diffusion in the N-type layers 51, 43, the first insulating film 45 a nd the second insulating layer 49 consisting of heat-resistant resin are deposited. Succeedingly an annular contact hole is opened through the insulating films, 45, 49 inside the P-type transformation region 44 by photolighography to form a P electrode 46 including a bonding pad section 47, followed by removal of the second insulating film 49 except the region under the P electrode 46 and further by formation of a N electrode 48 on the substrate side 41. Thus the capacity of the bonding pad can be decreased by adding the second insulating film 49. |
