| 摘要 |
PURPOSE:To prevent burning due to a difference in sensitiveness between the photoincident and non-incident parts by making an As density distribution of the layer containing red sensitiveness increasing agent Te small on the side of a transparent conductive film while large on the side of a beam reaching layer for reducing the V-I delay (reduced leading-out amount of a signal current). CONSTITUTION:The carrier generation layers 2-4 are piled up on a transparent conductive film 1 while the layer 3 contains Te and an As density increases from the layer 2 side to the layer 4 side. The layers 2 and 4 contain the high density of As while increasing thermal stability such as the prevention of Te diffusion or the like. A very small amount of LiF is added to a part of the layers 2 and 3. A carrier transit layer 51 and an Sb2S3 beam reaching layer 6 are piled up for making an image pickup tube target. Since the layer 3 containing Te is given said density sloping, the time constant of trapping and emission of positive holes and electrons is shortened while the tapping precedence at the time of thermal fluctuation reduces thus to decrease fluctuation in an inner electric field while reducing V-I delay and the burning generated due to a difference in sensitiveness between the photoincident and non-incident parts thus being able to obtain an image pickup tube target having high reliability.
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