| 摘要 |
PURPOSE:To improve photoresponsiveness of an image pickup device by using a target, in which a vacuum-evaporated SbS3 film and the SbS3 film deposited in a gas atmosphere are piled up on the amorphous silicon. CONSTITUTION:A glass substrate 1 is coated with an SnO2 film 2 while forming the SiO2 film 3 by sputtering. Next, reactive sputtering is performed in Ar and H2 having polysilicon as a target. Subsequently, an Sb2S3 granular block is resistance-heated at not less than 10<-3> for being evaporated followed by evaporating the Sb2S3 granular block in N2 or Ar by the same method for piling up the Sb2S3 film 5 with low denseness. When Thereby selecting the thickness of the film 6 to be 0.01-0.05mum while the thickness of the film 5 to be 0.03-0.05mum, the trapping precedence of charged carriers on the interface between the amorphous silicon photoconductor and Sb2S3 to become an electron implantation blocking layer is sharply reduced thus to improve photoresponsiveness.
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