| 摘要 |
PURPOSE:To prevent the concentration of heat at the central section of a semiconductor device simply without changing an emitter ballast resistance value in response to an emitter region, and to enable stable operation by making the peripheral length of the emitter region in a base region near to the central section of a substrate shorter than that of the emitter region in a base region far from the central section of the substrate. CONSTITUTION:The peripheral length of an emitter region 8 in a base cell 7 at the central section of a semiconductor substrate in base cells arranged in parallel with the semiconductor substrate is made shorter than that of emitter regions 10 in base cells 9 as both neighbors. Accordingly, the concentration of heat, the rise of a joining temperature, at the central section of the semiconductor substrate can be inhibited, thus resulting in stable RF operation. |
