| 摘要 |
PURPOSE:To change the characteristic of a transistor (TR) by changing the structure of thin film of an electronic amplifier element using one kind of thin metallic film and one kind of insulator thin film (or a thin metallic film and a semiconductor thin film or a semiconductor thin film and an insulator thin film respectively). CONSTITUTION:A thin film multi-layer is formed with plural layers of combination between a thin metallic film 1a and an insulator thin film 1b to obtain an artificial semiconductor 1. The artificial semiconductor 1 and an artificial semiconductor 2 with a thin film multi-layer comprising a thin metallic film 2a and an insulator thin film 2b having different period are connected. Further, three kinds of artificial semiconductors comprising the above and an artificial semiconductor 3 with a thin film multi-layer consisting of a thin metallic film 3a and an insulator thin film 3b having a different period are bonded sequentially to form a TR 4. The region of the semiconductor 2 is selected as a degree of the mean free path of electrons and the element 4 shows a TR operation.
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