| 摘要 |
PURPOSE:To enable the sure electrical connection by eliminating the interposition of a metallic oxide film between a wiring layer and an insulating film by a method wherein a wiring layer consisting of a high-melting-point metal such as Mo and W which is easily oxidized after which a metallic oxide film on a surface of the wiring layer is removed by etching and an insulating film is grown by gas-phase growth in a non-oxidizable atmosphere on the surface. CONSTITUTION:After the first insulating film 12 is formed on a surface of a substrate 10, a high-melting-point metal such as Mo and W is spread followed by patterning according to a predetermined wiring pattern to form the first wiring layer 14. During ashing, a metallic oxide film 18 is formed on the surface of the wiring layer 14 and the metallic oxide film 18 is removed by etching using a proper etching solution. The second insulating film 20 is grown by gas-phase growth under the reduced pressure so as to cover the wiring layer 14 and the insulating film 12. Consequently a metallic oxide film is not produced and the insulating film 20 can be connected with the wiring layer 14 closely. |
