| 摘要 |
PURPOSE:To carry out the crystal growth in high reproducibility in the production of a semiconductor by an organic metal vapor-phase growth method, by using a plasma for the decomposition of a raw material gas having poor thermal decomposition efficiency. CONSTITUTION:Both ends of a quartz reaction tube 9 are sealed with flanges 3, and a substrate plate 6 is placed on the internal heating substrate holder 5 in the reaction tube 9. The cavity in the reaction tube 9 is evacuated with the vacuum pump 4. A raw material gas having high thermal decomposition efficiency is introduced through the inlet pipe to a position just before the substrate plate 6 and a raw material gas having poor thermal decomposition efficiency is introduced through the inlet pipe 2 into the reaction tub 9. A high- frequency potential is imposed to the high-frequency coil 8 to effect the decomposition of the raw material gas having poor thermal decomposition efficiency to a plasma and a semiconductor film is formed on the substrate plate 6 from both of the raw material gases. If necessary, the plasma is localized by a magnetic field generated by the coil 7.
|
