发明名称 |
LEVEL DISCRIMINATING CIRCUIT |
摘要 |
PURPOSE:To compensate the negative temperature coefficient of the transistor (TR) of the final stage by making the current density of plural TRs of the pre-stage different so as to provide a positive temperature coefficient among base-emitter voltages. CONSTITUTION:The current density of a current flowing to TRs Q1, Q2 is made different so as to give the positive temperature coefficient between base-emitter voltages of the two TRs. Thus, the negative temperature coefficient of a TR Q3 is compensated so as to keep the threshold voltage of the TR Q3 viewed from the terminal No.1 constant independently of the ambient temperature of an IC.
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申请公布号 |
JPS61222314(A) |
申请公布日期 |
1986.10.02 |
申请号 |
JP19840007147 |
申请日期 |
1984.01.20 |
申请人 |
HITACHI LTD |
发明人 |
SEKI KUNIO;HORIUCHI KENJI |
分类号 |
H03K5/08;G01R19/165;H03K3/02;H03K17/14;H03K17/30;H03K17/60 |
主分类号 |
H03K5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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