| 摘要 |
PURPOSE:To prevent the formation of an oxide film or nitride film on a substrate surface in the stage of sputtering and to form a thin insulator film having excellent characteristics on the substrate surface by shutting off thoroughly the substrate for vapor deposition from the atmosphere when a shutter mechanism of a sputtering device is closed. CONSTITUTION:A target 3 consisting of an insulator such as SiO2, Ta2O5 or Si3N4, etc. provided on a target electrode 2 is attached in a vacuum chamber 1 and a substrate electrode 6 fixed with the substrate 5 such as Si semiconductor is disposed in the position facing the target. The inert atmosphere of Ar, etc. contg. 0-50% O2, N2, etc. is maintained in the vessel 1 and the surface of the target 3 is cleaned by presputtering. The substrate 5 is isolated from the atmosphere contg. O2 plasma or N2 plasma by a shutter mechanism 11 constituted of shielding surfaces consisting of a side wall 12 and three sheets of blades 13 to prevent the formation of the oxide film and nitride film on the surface of the substrate 5. The deterioration of the quality of the insulating film such as SiO2 or Ta2O5 by the succeeding sputtering is prevented.
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