| 摘要 |
PURPOSE:To obtain low Vth and a short channel effect by introducing an impurity having a conduction type reverse to that of a substrate to the surface of the substrate and forming a region having the same conduction type as the substrate and impurity concentration higher than that of the substrate into a region under an impurity layer. CONSTITUTION:A thick field oxide film is formed onto a P-type Si substrate 11, and an silicon oxide film 12 is shaped onto a region as a transistor. Phosphorus (P) 13 is implanted through an ion implantation method to form a region 14, and boron (B) 15 is implanted similarly through the ion implantation method to shape a region 16, and the desired impurities are introduced into the Si substrate. W 17 is deposited and processed, thus forming N<+> diffusion layer 18 as a source and a drain. Accordingly, structure in which an N-type impurity peak is shaped to the surface and a P-type impurity peak into the substrate is formed, thus acquiring excellent Vth-Leff characteristics (low Vth and characteristics of a small short channel effect).
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