SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To attain the stable working of a semiconductor storage device with high reliability by lowering the potential of a word line connected to the gate of a MOS field effect transistor TR immediately after its selection and raising said potential during a sensing operation of a bit line to eliminate the effects due to a case where a high level is lowered. CONSTITUTION:The gate of a MOS field effect TR6 which connects the storage contents 5 and a bit line 7 is connected to a word line 4. The 1st drive circuit 1 is connected directly to the line 4 and at the same time the 2nd drive circuit 2 is also connected to the line 4 via a capacity 3. When the electric charge stored in the storage capacity cell is read out, the line 4 is driven up to VA at a time point T1 by the circuit 1. Here VA<VC+VT is satisfied to shift only the potential of a low level to a bit line. Then a sense amplifier 8 starts its sensing action at a time point T2. The circuit 2 is actuated at a time point T3. Thus the line 4 is raised up to a level VB through the capacity 3. Then VB>VCC+VT is satisfied.