| 摘要 |
PURPOSE:To make a crystal growth on a step unnecessary and eliminate the deterioration of elements caused by the stress due to a waveguide by a method wherein a hetero construction is formed horizontally by utilizing mixed- crystallization of a superlattice construction produced by impurity diffusion and ion implantation. CONSTITUTION:Crystal growth of a P-type Ga0.4Al0.6As layer 9 and a GaAs/ Ga0.2Al0.8As superlattice layer 10 is successively made on a P-type GaAs substrate 8 by an MOCVD method. A detail composition of the superlattice layer 10 is such that the GaAs layer is composed of 10 laminated layers whose respective layer thickness is 5nm and the Ga0.2Al0.8As layer is composed of 10 laminated layers whose respective layer thickness is 15nm. Then a silicon nitride mask with a stripe shape window of 3mum width is formed to form a super lattice mixed-crystallizing region 11. Then, a P-type Ga0.4Al0.6As cladding layer 12, a Ga0.8Al0.2As activation layer 13, an N-type Ga0.4Al0.6As cladding layer 14 and an N-type GaAs cap layer 15 are formed by the MOCVD method again and Au/Cr and Au:Ga:Ni/Cr/Au are evaporated in a vacuum to form a positive side electrode 16 and a negative side electrode 17 respectively.
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