发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To make high-speed and uniform formation of a thin film on a large area substrate possible by providing a stage for measuring the number of raw material seeds, etc., near the main surface of the substrate to be formed with the thin film and a stage for controlling said number. CONSTITUTION:The number of raw material seeds such as disilane near the main surface of the substrate 3 to be formed with the thin film in a glow discharge reaction chamber 1 is measured by using at least coherent anti-Stokes' Raman spectroscopy (CARS). More specifically, colinear laser light 8 is condensed by a lens and is focused 50 near the substrate 3 through a transparent window to generate CARS light 10 of the intensity corresponding to the number of the raw material seeds in the extreme neighborhood of the focus 50 to obtain CARS spectra. The focus 50 is moved and the number of the raw material seeds, etc. are measured in each position. The flow rate of the gaseous raw material and the discharge rate of the reactive gas are controlled or the positions of vacuum discharge holes 6, 6' for a gaseous raw material introducing part 5 are changed so that the number of the raw material seeds is made equal. The stage for measuring the number of the raw material seeds within about 10mm from the surface to be formed with the thin film is more preferably included.
申请公布号 JPS61257478(A) 申请公布日期 1986.11.14
申请号 JP19850097946 申请日期 1985.05.10
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 FUKUDA NOBUHIRO;OGAWA SHINJI
分类号 G01N21/65;C23C16/50;C23C16/52 主分类号 G01N21/65
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