| 摘要 |
PURPOSE:To always obtain a sufficient electric connection even when a contact shape is ultrafine and deep by forming a high melting point metal film or a high melting point metal silicide film on the side and the bottom of a contacting hole of a conductive region formed on an interlayer insulating film. CONSTITUTION:An N-type conductive region 12 is formed on a P-type semiconductor substrate 11, a contacting hole 14 is opened at an interlayer insulating film 13, and a polycrystalline silicon 14 is grown by a reduced vapor phase growing method by utilizing the thermal decomposition of monosilane gas. Then, after a phosphorus is thermally diffused in a polycrystalline silicon film to provide a conductivity, solution which mainly contains a silicon is rotatably coated and baked to form an oxide film 16. Since the stepwise projection has a property of extremely reducing the thickness of the film, the thickness of the film 16a at the top fo the contacting hole side is extremely reduced.
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