| 摘要 |
PURPOSE:To enable a coating on the numerous end faces of a semiconductor laser to be performed at a time and to very simplify the coating onto the end faces by a method wherein plural grooves are kept formed by a reactive ion etching method and a dielectric film is formed in such a way as to cover at least the sidewalls of the grooves. CONSTITUTION:An N-type Al0.3Ga0.7As buffer layer 2 of 3mum thickness, a non-doped Al0.1Ga0.9As active layer 3 of 0.1mum thickness, a P-type Al0.3Ga0.7As clad layer 4 of 2mum thickness and a P-type GaAs cap layer 5 of 1mum thickness are made to epitaxially grow in order on an N-type GaAs substrate 1, and after that, a P-side electrode 6 consisting of Cr and Ar and an N-side electrode 7 consisting of Au, Ga and Ni are respectively formed on the P-type GaAs cap layer 5 and under the N-type GaAs substrate 1. Then, 20mum wide grooves 8, each having its side surface vertical to the active layer 3, are formed in the semiconductor wafer deeper than the active layer 3 at an interval of 300mum by an RIE method, and after that, an about 2,800Angstrom thick SiO2 film 9 is formed on the whole surface. Moreover, parts of the SiO2 film 9, which are located at a flat part 10 other than the grooves 8, are removed, the electrode 6 is made to expose and the wafer is cut at the groove parts 8, whereby the semiconductor laser in the desired groove parts 8, whereby the semiconductor laser in the desired constitution is obtained. |
