| 摘要 |
PROBLEM TO BE SOLVED: To obtain a TFT substrate of low power consumption having a high charge mobility and high potential holding characteristics, by improving the throughput of laser anneal, and irradiating the channel width of the TFT with a highly accurate laser light pattern.SOLUTION: In a thin film transistor substrate 1 where a plurality of thin film transistors 10 are arranged on a substrate 1A, respectively, along the colum and row thereof, each thin film transistor 10 includes a laser anneal part 10A where an amorphous silicon layer 13 forming a channel region is laser annealed as a polysilicon layer. The laser anneal parts 10A are arranged with a set pitch in the scan direction S for moving the laser annealing light and the substrate relatively. A laser anneal part 10A narrower than the channel width W, formed in a direction perpendicular to the scan direction S, is provided in the channel width.SELECTED DRAWING: Figure 4 |
