发明名称 APPARATUS FOR GROWING LIQUID-PHASE EPITAXIAL FILM
摘要 PURPOSE:To carry out continuously epitaxial growth, by drawing up part of melt contained in a high-temperature region formed at the bottom of a furnace body to an upward low-temperature region, and dipping a substrate therein. CONSTITUTION:The first crucible 5 of large volume containing a melt 3 is installed in a high-temperature region (H) formed at the bottom of a furnace body 2 containing a built-in heater 1, and a low-temperature region (L) is formed in the upper part of the furnace body 2. A crucible lift 6 equipped with a temperature detector 8 is then lowered to insert the second crucible 7 hung from the lift 6 into the crucible 5 and draw up part of the melt 3. The drawn up melt 3 is then transferred to a given position in the low-temperature region (L), and a substrate lift 4 is lowered to dip a substrate 3 supported by a holder 9 in the melt 3 filled in the crucible 7 and carry out the epitaxial growth. The holder 9 is then pulled up to recover the substrate 3, and the crucible 7 is lowered to return the melt to the interior of the crucible 5.
申请公布号 JPS61270297(A) 申请公布日期 1986.11.29
申请号 JP19850113512 申请日期 1985.05.27
申请人 NEC CORP 发明人 OKADA OSAMU
分类号 C30B19/06 主分类号 C30B19/06
代理机构 代理人
主权项
地址