| 摘要 |
PURPOSE:To prepare field-effect type transistor having high gains by installing a substrate holder, in which the mounting surface of a substrate is formed with an inclination except 90 deg. to an axis of rotation, and a molecular-beam cell mounted at a position where the state not faced oppositely to the revolving substrate is generated with time. CONSTITUTION:A substrate holder 2 in which the mounting surface 2A of a substrate 9 is shaped with an inclination except 90 deg. to an axis of rotation is fitted, and molecular-beam cells 6-8, etc. are set up at positions where the state not faced oppositely to the revolving substrate 9 is generated with time. Since a semiconductor crystal film remarkably thinner than conventional devices is grown or modulation doping having extremely short periods can be conducted, the method is suitable when superlattice structure at short periods must be acquired. Since semiconductor crystal films having different film thickness according to regions can be realized by one-time growth under a controlled state, the method is effective when manufacturing a multi-wavelength integrated semiconductor laser.
|
