| 摘要 |
PURPOSE:To obtain a high gain even at a high frequency band by inserting a coil between FETs at the 1st and 2nd stages of an amplifier circuit or between FETs at the 2nd and 3rd stages so as to apply the peaking of the gain at a high frequency region. CONSTITUTION:Field effect transistors (FET) 1, 2, 3 are connected in a form of three stages via a capacitor 6. A resistor 7 is inserted between the drain of the FET 3 of the 3rd stage and a gate of the FET 1 of the 1st stage to apply negative feedback and the coil 13 is inserted between the FET 1 of the 1st stage and the FET 2 of the 2nd stage. Thus, a remarkable broad band, that is, high gain at a high frequency is attained.
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