| 摘要 |
PURPOSE:To obtain a photoconductor having high spectral sensitivity characteristics even in infrared ray range with excellent charging characteristic by forming a carrier generating layer mainly of a microcrystalline silicon (muc-Si), and forming a carrier transport layer of an amorphous silicon (a-Si). CONSTITUTION:The first blocking layer 24a, the first photoconductor layer 24d made of the first carrier transport layer 24b and the first carrier generation layer 24c and the first surface layer 24e are sequentially laminated on a drumlike substrate 12. The layer 24b arrives the carrier generated in the layer 24c efficiently at a drumlike substrate 12. Further, when charging capacity and potential holding capacity at dark time can be enhanced, they may be formed form a-Si or muc-Si. The layer 23c absorbs arbitrary wavelength light to generate a light generation carrier, and is formed of part or all of muc-Si to have spectral sensitivity to long wavelength light.
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