| 摘要 |
PURPOSE:To enlarge a clearance between adjacent bits, to eliminate a mutual intervention and to obtain an image sensor having high resolution and high reliability by forming a light-shielding body for controlling the quantity of the incidence of beams so that the overlapping sections of a lower electrode and an upper electrode are made smaller than the size of a window. CONSTITUTION:An adhesion type image sensor is constituted by lower electrodes 2 consisting of a large number (24 dot/mm) of striped chromium thin-film patterns disposed in an array at pitches P such as 41.6mum ones and intervals r<2> such as 28.2mum ones and in stripe width w such as 13.4mum one on an insulating glass substrate 1, photoelectric conversion layers 3 composed of amorphous hydride silicon layers of 1mum film thickness severally laminated onto the upper layers of the lower electrodes 2 in succession in a beltlike manner, a light- transmitting upper electrode 4 consisting of an indium oxide tin layer, a protective film 5 shaped onto said upper electrode, and a light-shielding film 6 composed of an silicon oxide layer with windows 7, which are bored so that the patterns for said lower electrodes 2 on the protective film are formed respectively at the centers and the length (a) of one sides thereof is 33.3mum.
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