| 摘要 |
PURPOSE:To suppress the generation of cracks and chips in a semiconductor device by a method wherein the process including the formation of a device and the thinning of the device by polishing from the rear surface is accomplished for a semiconductor wafer with a polycrystalline silicon layer formed on its peripheral walls and said polycrystalline silicon layer is removed by etching after said process. CONSTITUTION:A prescribed thickness f a polycrystalline silicon layer 13 is formed on the surface of a silicon ingot 12, whereafter the silicon ingot 12 is cut into slices of a prescribed thickness for the formation of a semiconductor wafer 14. A semiconductor wafer14 is provided with a polycrystalline silicon layer 13 along its peripheral walls and then its two surfaces are polished flat by a prescribed method. Next, in one of the two surfaces, a device is built, consisting of a P-N junction formed after the application of necessary steps including the diffusion of impurity.An adhesive tape 15 is attached to the surface method with the device, and the rear side is polished and reduced into a prescribed thickness. The stress on the device is exposed to in this process is absorbed by the policrystalline silicon layer 13. Wax 16 is applied to the surface, and the rear side is exposed to an etchant 17 for the removal of the polycrystalline silicon layer 13.
|
