发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
The present invention provides a substrate processing method and a substrate processing apparatus capable of correctly detecting separation of a substrate from a mounting table. The substrate processing apparatus (11) comprises: a chamber (20) receiving a substrate (G) to perform plasma etching of the substrate (G) by plasma; a mounting table (21) installed in the inside of the chamber (20) to mount the substrate (G); an electrostatic adsorption electrode (27) embedded in the mounting table (21) to electrostatically adsorb the substrate (G) to the mounting table (21); a direct current (DC) power (28) to apply DC voltage to the electrostatic adsorption electrode (27); a plasma generation high frequency power (41) to supply high frequency power to generate plasma; and a DC voltage monitor (46) to monitor the DC voltage applied to the electrostatic adsorption electrode (27). When the DC voltage monitored by the DC voltage monitor (46) exceeds a predetermined threshold, the plasma generation high frequency power (41) stops to supply the high frequency power. |
申请公布号 |
KR20160111848(A) |
申请公布日期 |
2016.09.27 |
申请号 |
KR20160027463 |
申请日期 |
2016.03.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TOJO TOSHIHIRO;YAMAGUCHI KATSUMASA;UTSUGI YASUFUMI |
分类号 |
H01L21/3065;H01J49/10;H01L21/22;H01L21/3213;H01L21/683;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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