发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 The present invention provides a substrate processing method and a substrate processing apparatus capable of correctly detecting separation of a substrate from a mounting table. The substrate processing apparatus (11) comprises: a chamber (20) receiving a substrate (G) to perform plasma etching of the substrate (G) by plasma; a mounting table (21) installed in the inside of the chamber (20) to mount the substrate (G); an electrostatic adsorption electrode (27) embedded in the mounting table (21) to electrostatically adsorb the substrate (G) to the mounting table (21); a direct current (DC) power (28) to apply DC voltage to the electrostatic adsorption electrode (27); a plasma generation high frequency power (41) to supply high frequency power to generate plasma; and a DC voltage monitor (46) to monitor the DC voltage applied to the electrostatic adsorption electrode (27). When the DC voltage monitored by the DC voltage monitor (46) exceeds a predetermined threshold, the plasma generation high frequency power (41) stops to supply the high frequency power.
申请公布号 KR20160111848(A) 申请公布日期 2016.09.27
申请号 KR20160027463 申请日期 2016.03.08
申请人 TOKYO ELECTRON LIMITED 发明人 TOJO TOSHIHIRO;YAMAGUCHI KATSUMASA;UTSUGI YASUFUMI
分类号 H01L21/3065;H01J49/10;H01L21/22;H01L21/3213;H01L21/683;H05H1/46 主分类号 H01L21/3065
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