发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.
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申请公布号 |
US4637127(A) |
申请公布日期 |
1987.01.20 |
申请号 |
US19820395110 |
申请日期 |
1982.07.06 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
KUROGI, YUKINORI;ENDO, NOBUHIRO;TANNO, KOHETSU |
分类号 |
H01L21/20;H01L21/762;H01L29/06;(IPC1-7):H01L21/205;H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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